High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate-Reference-Cited by-同舟云学术

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Published:2022-09 Issue:9 Volume:69 Page:4859-4863
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Hsiang-Chun¹^ORCID,Pu Taofei¹^ORCID,Li Xiaobo¹^ORCID,Liu Chia-Hao²,Wu JunYe¹,Yang Jiaying¹,Zhang Ziyue¹^ORCID,Lu Youming¹,Wang Qi³^ORCID,Song Lijun⁴,Chiu Hsien-Chin²^ORCID,Ao Jin-Ping⁵^ORCID,Liu Xinke¹^ORCID

Affiliation:

1. College of Materials Science and Engineering, Shenzhen University–Hanshan Normal University Postdoctoral Workstation, Shenzhen University, Shenzhen, China

2. Department of Electronic Engineering, Chang Gung Memorial Hospital, Taoyuan, Taiwan

3. Dongguan Institute of Opto-Electronics, Peking University, Dongguan, Republic of China

4. Research Center of Guangdong Intelligent Charging and System Integration Engineering Technology, Shenzhen Winsemi Microelectronics Company Ltd., Shenzhen, Republic of China

5. School of Microelectronics, Xidian University, Xi’an, China

Funder

National Natural Science Foundation of China

Key-Area Research and Development Program of Guangdong Province

Guangdong Science Foundation for Distinguished Young Scholars

Science and Technology Foundation of Shenzhen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09851839.pdf?arnumber=9851839