Analysis of High Frequency AlGaN/GaN-Based HEMT for Resistive Load Inverter
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-0154-4_16
Reference29 articles.
1. S.K. Dubey, A. Islam, Study and analysis of AlInN/GaN based high electron mobility transistor, book series: Lecture Notes in Electrical Engineering (LNEE), vol. 664 (Springer Nature, Singapore, 2020), 449–459. https://doi.org/10.1007/978-981-15-5089-8_44
2. S.K. Dubey, A. Islam, Indium phosphide based dual gate high electron mobility transistor, book series: Lecture Notes in Electrical Engineering (LNEE), 664 (Springer Nature, Singapore, 2020), 255–264. https://doi.org/10.1007/978-981-15-5089-8_24
3. D. Ranka, A.K. Rana, R. Kumar Yadav, K. Yadav, D. Giri, Performance evaluation of FD-SOI MOSFETS for different metal gate work function. Int. J. VLSI Des. Commun. Syst. 2(1), 11–24 (2011). https://doi.org/10.5121/vlsic.2011.2102
4. F. Thome, F. Schäfer, S. Türk, P. Yagoubov, A. Leuther, A 67–116-GHz cryogenic low-noise amplifier in a 50-nm InGaAs metamorphic HEMT technology. IEEE Microwave Wirel. Compon. Lett.Wirel. Compon. Lett. 32(5), 430–433 (2022). https://doi.org/10.1109/LMWC.2021.3134462
5. I. Rossetto et al., Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate. IEEE Trans. Electron Devices 63(6), 2334–2339 (2016). https://doi.org/10.1109/TED.2016.2553721
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