Study and Analysis of AlInN/GaN Based High Electron Mobility Transistor
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-5089-8_44
Reference23 articles.
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2. Mishra UK, Parikh P, Yi-Feng Wu (2002) AlGaN/GaN HEMTs-an overview of device operation and applications. Proc IEEE 90(6):1022–1031
3. Goyal N, Fjeldly TA (2016) Determination of surface donor states properties and modeling of InAlN/AlN/GaN heterostructures. IEEE Trans Electron Devices 63(2):881–885
4. Amarnath G, Srinivas G, Lenka TR (2015) Electrical characteristics and 2DEG properties of passivated InAlN/AlN/GaN HEMT. In: 2015 international conference on computer communication and informatics (ICCCI-2015). Coimbatore, India
5. Amarnath G, Srinivas G, Lenka TR (2015) 374 GHZ cut-off frequency of ultra-thin InAlN/AlN/GaN MIS HEMT. In: 2015 international conference on computer communication and informatics (ICCCI-2015), Coimbatore, India
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