Indium Phosphide Based Dual Gate High Electron Mobility Transistor
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-5089-8_24
Reference16 articles.
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2. Yu G, Cai Y, Wang Y, Dong Z, Zeng C, Zhao D, Zhang BA (2013) Double-gate AlGaN/GaN HEMT with improved dynamic performance. IEEE Electron Device Lett. 34(6):747–749
3. Verma N, Parveen, Jogi J (2015) Quantum simulation of a double gate double heterostructure in AlAs/InGaAs HEMT to analyze temperature effects. In: 2015 17th UKSim-AMSS international conference on modelling and simulation (UKSim), pp 582–587
4. Zafar S, Kashif A, Hussain S, Akhtar N, Bhatti N, Imran M (2013) Designing of double gate HEMT in TCAD for THz applications. In: Proceedings of 2013 10th international Bhurban conference on applied sciences and technology (IBCAST), pp 402–405. Islamabad, Pakistan
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