High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design-Reference-Cited by-同舟云学术

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High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

Published:2018 Issue: Volume:6 Page:201-206
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Chiu Hsien-Chin^ORCID,Chang Yi-Sheng,Li Bo-Hong,Wang Hsiang-Chun,Kao Hsuan-Ling,Hu Chih-Wei,Xuan Rong

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8232486/08247185.pdf?arnumber=8247185

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates;IEEE Transactions on Electron Devices;2024-02

2. Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. p-GaN HEMT-on-SiC Structural Optimization for High Drain Current and High Threshold Voltage;2023 International Conference in Advances in Power, Signal, and Information Technology (APSIT);2023-06-09

4. Research Progress and Development Prospects of Enhanced GaN HEMTs;Crystals;2023-06-04

5. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

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