Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000557?crawler=true&mimetype=application/pdf
Reference4 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
3. An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz
4. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
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