Monolithic inverter using GaN-based CMOS-HEMTs with depletion-mode and enhancement-mode of ferroelectric charge trap gate stacked oxide layers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs);Biswas;Mater. Sci. Semicond. Process.,2021
2. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron. Dev.,2017
3. Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures;Ťapajna;Mater. Sci. Semicond. Process.,2021
4. Fabrication and characterization of GaN-based fin-channel array metal-oxide-semiconductor high-electron mobility transistors with recessed-gate and Ga₂O₃ gate insulator layer;Lee;IEEE J. Electron Devices Soc.,2021
5. Band alignment and performance improvement mechanisms of chlorine-treated ZnO-gate AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors;Chiou;IEEE Trans. Electron. Dev.,2011
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