Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference66 articles.
1. Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si;Egawa,2012
2. GaN-based RF power devices and amplifiers;Mishra;Proc. IEEE,2008
3. High breakdown (¿ 1500 V) AlGaN/GaN HEMTs by substrate-transfer technology;Lu;IEEE Electron Device Lett.,2010
4. Effect of In composition on electrical performance of AlInGaN/GaN-based metal–insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si;Biswas;J. Appl. Phys.,2019
5. A temperature stable amplifier characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si;Bose;IEEE Access,2021
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献