Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study
Author:
Funder
Government of Malaysia Ministry of Higher Education
Publisher
Elsevier BV
Reference46 articles.
1. On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTs
2. Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse
3. Comparison Between Competing Requirements of GaN and SiC Family of Power Switching Devices
4. Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOₓ Charge Trapping Layer
5. Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator
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