Comparison Between Competing Requirements of GaN and SiC Family of Power Switching Devices

Abstract

Abstract GaN and SiC have been widely investigated for future power switching systems with high efficiencies. So far, prototypes of working transistors using these wide bandgap materials have demonstrated the superior performances suggesting the great potential. This article compares two materials over three main requirements in the power switching realm: the blocking voltage, the conduction loss (power efficiency) and the cost. Based on the comparison, a conclusion is drawn that GaN and SiC will be coexistent for each of them has own advantages and neither of them can replace the other.