On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9359727/09534781.pdf?arnumber=9534781
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study;Results in Physics;2024-09
2. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔV TH Transients in p-GaN Gate Power HEMTs;IEEE Transactions on Electron Devices;2024-03
3. Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs;IEEE Journal of the Electron Devices Society;2024
4. Preconditioning of Ohmic p-GaN power HEMT for reproducible V measurements;Solid-State Electronics;2024-01
5. Stability of GaN HEMT Device Under Static and Dynamic Gate Stress;IEEE Journal of the Electron Devices Society;2024
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