Stability of GaN HEMT Device Under Static and Dynamic Gate Stress-Reference-Cited by-同舟云学术

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Published:2024 Issue: Volume:12 Page:165-169
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Gao Linfei¹,Zhong Ze¹^ORCID,Zhang Qiyan¹^ORCID,Li Xiaohua¹,Xiong Xinbo¹,Chen Shaojun¹,Chen Longkou²,Yan Huaibao³,Zhang Anle³,Han Jiajun⁴,Zhuang Wenrong⁴,Qiu Feng⁵^ORCID,Chiu Hsien-Chin⁶^ORCID,Huang Shuangwu¹^ORCID,Liu Xinke¹^ORCID

Affiliation:

1. College of Materials Science and Engineering, Shenzhen University, Shenzhen, China

2. Shenzhen Baseus Technology Company Ltd., Shenzhen, China

3. Jiangxi Yuhongjin Material Technology Company Ltd., Fuzhou, China

4. Dongguan Sino Nitride Semiconductor Company Ltd., Dongguan, China

5. Gensol (Shenzhen) Tech. Innovation Center Company Ltd., Shenzhen, China

6. Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan

Funder

Guangdong Major Project of Basic and Applied Basic Research

Guangdong Science Foundation for Distinguished Young Scholars

Shenzhen Science and Technology Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6245494/10416702/10422723.pdf?arnumber=10422723

Reference43 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. GaN-on-Si Power Technology: Devices and Applications

3. Reliability and failure analysis in power GaN-HEMTs: An overview

4. Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

5. Gate Reliability of p-GaN HEMT With Gate Metal Retraction