Impact of boron in ultraviolet quantum well-based light emitting diodes

Abstract

Abstract The ByAlxGa1-x–yN system validates promise as a suitable option for fabricating opto-electronic devices like Light-Emitting-Diodes (LEDs) & laser diodes. This study conducts a comparative analysis between two types of LEDs: one with a single quantum well (SQW) composed of AlGaN and another with BAlGaN, containing 1% boron, 22% aluminum, and a 3 nm thickness. These LEDs are designed as AlGaN-based Quantum Well (LED1) and BAlGaN-based Quantum well devices (LED2). Technology Computer-Aided Design (TCAD) Silvaco physical simulator is used to perform simulations and comparisons in terms of both optical and electrical characteristics. The simulations encompass the anode current with respect to anode voltage, luminous power and wall-plug efficiency relative to injection current, and power spectral density concerning wavelength. Remarkably, even with a mere 1% boron content within the quantum well, the LED's performance displays a 2.3% enhancement in power spectral density and a 10% boost in wall-plug efficiency.