Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers

Author:

Modak Sushrut1ORCID,Chernyak Leonid1ORCID,Schulte Alfons1,Xian Minghan2,Ren Fan2ORCID,Pearton Stephen J.3ORCID,Lubomirsky Igor4ORCID,Ruzin Arie5ORCID,Kosolobov Sergey S.6ORCID,Drachev Vladimir P.67

Affiliation:

1. Department of Physics, University of Central Florida, Orlando, Florida 32816, USA

2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

3. Material Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

4. Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel

5. School of Electrical Engineering, Tel Aviv University, Tel Aviv 69978, Israel

6. Skolkovo Institute of Science and Technology, Ctr Design, Manufacturing & Mat, Nobel St, Bldg 1, Moscow 121205, Russia

7. Department of Physics, University of North Texas, Denton, Texas 76203, USA

Funder

North Atlantic Treaty Organization

Division of Electrical, Communications and Cyber Systems

United States-Israel Binational Science Foundation

Defense Threat Reduction Agency

Division of Materials Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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