Effect of Electron Irradiation and Defect Analysis of $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes-Reference-Cited by-同舟云学术

Effect of Electron Irradiation and Defect Analysis of $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes

Published:2024 Issue: Volume: Page:1-5
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Zhengliang¹^ORCID,Wang Tianqi²^ORCID,Xiao Liyi³^ORCID,Liu Chaoming⁴,Zhou Jiaming⁵,Zhang Yanqing⁶^ORCID,Qi Chunhua⁶,Ma Guoliang⁶,Huo Mingxue⁶

Affiliation:

1. Space Environment Simulation Research Infrastructure (SESRI) and the Microelectronics Center, Harbin Institute of Technology, Harbin, China

2. Space Environment Simulation Research Infrastructure (SESRI) and the Frontiers Science Center for Matter Behave in Space Environment, Harbin Institute of Technology, Harbin, China

3. Microelectronics Center, Harbin Institute of Technology, Harbin, China

4. School of Materials Science and Engineering and the Frontiers Science Center for Matter Behave in Space Environment, Harbin Institute of Technology, Harbin, China

5. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China

6. Space Environment Simulation Research Infrastructure (SESRI), Harbin Institute of Technology, Harbin, China

Funder

National Natural Science Foundation of China

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Project

China Postdoctoral Science Foundation Funded Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/4358746/10371227.pdf?arnumber=10371227

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