Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond-Reference-Cited by-同舟云学术

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

Published:2017 Issue:33 Volume:5 Page:8338-8354
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Munho¹²³⁴,Seo Jung-Hun⁵⁶⁷⁴^ORCID,Singisetti Uttam⁸⁶⁷⁴,Ma Zhenqiang⁹¹⁰¹¹⁴

Affiliation:

1. Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory

2. University of Illinois at Urbana-Champaign

3. Urbana

4. USA

5. Department of Materials Design and Innovation

6. University at Buffalo

7. Buffalo

8. Department of Electrical Engineering

9. Department of Electrical and Computer Engineering

10. University of Wisconsin-Madison

11. Madison

Abstract

Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications.

Funder

National Science Foundation

Defense Advanced Research Projects Agency

Office of Naval Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC02221B

Reference100 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. A comprehensive review of ZnO materials and devices

3. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

4. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

5. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

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