Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2807272
Reference10 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
3. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
4. Auger recombination in InGaN measured by photoluminescence
5. Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
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