Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1861116
Reference18 articles.
1. High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
2. Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer
3. High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
4. Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
5. Minority carrier diffusion length and lifetime in GaN
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