High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1597989
Reference16 articles.
1. 300°C GaN/AlGaN Heterojunction Bipolar Transistor
2. Graded-emitter AlGaN/GaN heterojunction bipolar transistors
3. High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
4. High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors
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1. “Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration;Applied Physics Express;2022-04-01
2. High-Gain Gated Lateral Power Bipolar Junction Transistor;IEEE Electron Device Letters;2021-09
3. Rectifying behavior in the GaN/graded-AlxGa1−xN/GaN double heterojunction structure;Journal of Physics D: Applied Physics;2018-04-30
4. Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling;physica status solidi (a);2016-09-29
5. Characteristics of GaN-Based Bipolar Transistors on Sapphire Substrates With the n-Type Emitter Region Formed Using Si-Ion Implantation;IEEE Transactions on Electron Devices;2014-10
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