Author:
Ren Fan,Abernathy Cammy R.,Van Hove J. M.,Chow P. P.,Hickman R.,Klaasen JJ,Kopf R. F.,Cho Hyun,Jung K. B.,La Roche J. R.,Wilson R. G.,Han J.,Shul R. J.,Baca A. G.,Pearton S.J.
Abstract
A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the device shows improved gain. Future efforts should focus on methods for reducing base resistance, which are briefly summarized.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Cited by
63 articles.
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