Piezoelectric charge densities in AlGaN/GaN HFETs-Reference-Cited by-同舟云学术

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Piezoelectric charge densities in AlGaN/GaN HFETs

Published:1997 Issue:14 Volume:33 Page:1230
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Asbeck P.M.,Yu E.T.,Lau S.S.,Sullivan G.J.,Van Hove J.,Redwing J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19970843?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

3. AlGaN/GaN HEMTs grown on SiC substrates

4. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure

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