Deep emission band at GaInP/GaAs interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364138
Reference16 articles.
1. Optical investigations of GaAs‐GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
2. LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires
3. Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy
4. Evidence of type‐II band alignment at the ordered GaInP to GaAs heterointerface
5. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
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1. Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect;Journal of Crystal Growth;2013-05
2. Integrated diagnostics of heterostructures with QW layers;Semiconductors;2009-09
3. GaAs quantum well structures investigation by local cathodoluminescence;Superlattices and Microstructures;2009-04
4. Atomic diffusion and interface electronic structure at In[sub 0.49]Ga[sub 0.51]P∕GaAs heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
5. Correlation between the base–emitter interface crystalline quality and the current gain in InGaP/GaAs HBTs grown by MOVPE;Journal of Crystal Growth;2007-01
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