LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires-Reference-Cited by-同舟云学术

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LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

Published:1992-11 Issue:1-4 Volume:124 Page:199-206
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Guimarães F.E.G.,Elsner B.,Westphalen R.,Spangenberg B.,Geelen H.J.,Balk P.,Heime K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition

2. Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs

3. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

4. Localized deposition of GaAs/GaInP heterostructures using LP-MOVPE

5. Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates

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2. High-Speed MOVPE Growth of InGaP Solar Cells;IEEE Journal of Photovoltaics;2020-03

3. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

4. Fabrication of GaAs solar cells grown with InGaP layers by hydride vapor-phase epitaxy;Japanese Journal of Applied Physics;2018-07-05

5. Carrier quenching in InGaP/GaAs double heterostructures;Journal of Applied Physics;2015-08-14

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