Tunneling‐Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors-Reference-Cited by-同舟云学术

Tunneling‐Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors

Published:2020-09-13 Issue:2 Volume:258 Page:2000395
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Liborius Lisa¹^ORCID,Bieniek Jan¹^ORCID,Possberg Alexander¹^ORCID,Tegude Franz-Josef¹^ORCID,Prost Werner¹^ORCID,Poloczek Artur¹^ORCID,Weimann Nils¹^ORCID

Affiliation:

1. Components for High Frequency Electronics (BHE) University of Duisburg-Essen Lotharstr. 55 Duisburg 47057 Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000395

Reference48 articles.

1. III–V nanowires and nanowire optoelectronic devices

2. A review on III–V core–multishell nanowires: growth, properties, and applications

3. Synthesis and Applications of III–V Nanowires

4. Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

5. Room-temperature electroluminescence from radial p–i–n InP/InAsP/InP nanowire heterostructures in the 1.5-µm-wavelength region

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