Fabrication of GaAs solar cells grown with InGaP layers by hydride vapor-phase epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=8S3/a=08RD06/pdf
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2. Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source;Light-Emitting Devices, Materials, and Applications XXVII;2023-03-14
3. 1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures;Advanced Energy and Sustainability Research;2023-03
4. 28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System;Solar RRL;2021-12-19
5. Topical review: pathways toward cost-effective single-junction III–V solar cells;Journal of Physics D: Applied Physics;2021-12-03
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