Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98062
Reference8 articles.
1. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
2. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
3. GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substrates
4. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
5. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
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