Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP-Reference-Cited by-同舟云学术

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Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP

Published:1976-01 Issue:6 Volume:37 Page:629-637
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Nelson R.J.,Holonyak N.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference41 articles.

1. Extended Abstracts;Archer,1970

2. Materials for light emitting diodes

3. Band structure enhancement and optimization of radiative recombination in GaAs1−x Px:N (and In1−x Gax P:N)

4. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

5. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

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