Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Band alignment between GaAs and partially ordered GaInP
2. Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy
3. Deep emission band at GaInP/GaAs interface
4. Evidence for an Anisotropic State of Two-Dimensional Electrons in High Landau Levels
5. Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
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1. Anomalous conducting heterointerface of non-stoichiometric CaxTayO3+δ/SrTiO3;Journal of Alloys and Compounds;2021-09
2. Experimental studies of the effects of atomic ordering in epitaxial Ga x In1 – x P alloys on their optical properties;Semiconductors;2017-09
3. Experimental studies of the effects of atomic ordering in epitaxial Ga x In1–x P alloys on their structural and morphological properties;Semiconductors;2017-08
4. Experimental investigations of atomic ordering effects in the epitaxial GaxIn1-xP, coherently grown on GaAs (100) substrates;Physica B: Condensed Matter;2017-03
5. Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structures;Journal of Applied Physics;2017-01-14
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