Experimental investigations of atomic ordering effects in the epitaxial GaxIn1-xP, coherently grown on GaAs (100) substrates-Reference-Cited by-同舟云学术

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Experimental investigations of atomic ordering effects in the epitaxial GaxIn1-xP, coherently grown on GaAs (100) substrates

Published:2017-03 Issue: Volume:509 Page:1-9
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Seredin P.V.,Goloshchapov D.L.,Khudyakov Yu.Yu.,Lenshin A.S.,Lukin A.N.,Arsentyev I.N.,Prutskij Тatiana

Funder

President of Russian Federation

Russian Ministry of Education

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Spontaneous atomic ordering in semiconductor alloys: causes, Carriers, and Consequences;Zunger;MRS Bull.,1997

2. Optical properties of zinc-blende semiconductor alloys: effects of epitaxial strain and atomic ordering;Wei;Phys. Rev. B,1994

3. CuAu-I-type ordered structures in InxAl1−xAs epilayers grown on (001) InP substrates;Lee;Appl Phys. Lett.,2003

4. Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect;Uchida;J. Cryst. Growth,2013

5. CuPt-B ordered microstructures in GaInP and GaInAs films;Ahrenkiel;MRS Proc.,1999

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural-spectroscopic study of epitaxial GaAs layers grown on compliant substrates based on a superstructural layer and protoporous silicon;Applied Surface Science;2021-01

2. Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon;Semiconductors;2021-01

3. Spectroscopic Studies of Integrated GaAs/Si Heterostructures;Semiconductors;2021-01

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