Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structures
Author:
Affiliation:
1. Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, Hans-Meerwein-Str. 6, 35032 Marburg, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973587
Reference43 articles.
1. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
2. A study of GaInP/GaAs interfaces: metallurgical coupling of successive quantum wells
3. Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy
4. Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy
5. Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions
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