Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices-Reference-Cited by-同舟云学术

Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Published:2022-12-04 Issue:3 Volume:10 Page:2201648
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Maheu Clément¹^ORCID,Zare Pour Mohammad Amin²^ORCID,Damestoy Iban¹,Ostheimer David²,Mellin Maximilian¹^ORCID,Moritz Dominik C.¹^ORCID,Paszuk Agnieszka²^ORCID,Jaegermann Wolfram¹^ORCID,Mayer Thomas¹^ORCID,Hannappel Thomas²^ORCID,Hofmann Jan P.¹^ORCID

Affiliation:

1. Surface Science Laboratory Department of Materials and Earth Sciences Technical University of Darmstadt Otto‐Berndt‐Strasse 3 64287 Darmstadt Germany

2. Fundamentals of Energy Materials Institute of Physics Ilmenau University of Technology Gustav‐Kirchhoff‐Strasse 5 98693 Ilmenau Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201648

Reference36 articles.

1. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

2. Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

3. High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain‐Balanced GaInAs/GaAsP Quantum Wells

4. Efficient direct solar-to-hydrogen conversion by in situ interface transformation of a tandem structure

5. Failure Modes of Platinized pn⁺-GaInP Photocathodes for Solar-Driven H₂ Evolution

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