Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency-Reference-Cited by-同舟云学术

Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Published:2014-01-13 Issue:3 Volume:22 Page:277-282
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Dimroth Frank¹,Grave Matthias¹,Beutel Paul¹,Fiedeler Ulrich¹,Karcher Christian¹,Tibbits Thomas N. D.¹,Oliva Eduard¹,Siefer Gerald¹,Schachtner Michael¹,Wekkeli Alexander¹,Bett Andreas W.¹,Krause Rainer²,Piccin Matteo²,Blanc Nicolas²,Drazek Charlotte²,Guiot Eric²,Ghyselen Bruno²,Salvetat Thierry³,Tauzin Aurélie³,Signamarcheix Thomas³,Dobrich Anja⁴,Hannappel Thomas⁴,Schwarzburg Klaus⁴

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems ISE; Heidenhofstr. 2 79110 Freiburg Germany

2. SOITEC S.A.; Parc Technologique des Fontaines 38190 Bernin France

3. CEA LETI MINATEC campus; 17 rue des Martyrs 38054 Grenoble France

4. Helmholtz-Zentrum Berlin HZB; Hahn-Meitner-Platz 1 14109 Berlin Germany

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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5. 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions;Geisz;Applied Physics Letters,2008

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