1. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
2. D. J. Friedman, J. F. Geisz, A. G. Norman, M. W. Wanlass, and S. R. Kurtz, Proceedings of the Fourth World Conference on Photovoltaic Energy Conversion, Hawaii (IEEE, New York, 2006), p. 598.
3. Metamorphic InyGa1−yAs/InzAl1−zAs heterostructure field effect transistors grown on GaAs(001) substrates using molecular-beam epitaxy
4. M. W. Wanlass, S. P. Ahrenkiel, R. K. Ahrenkiel, D. S. Albin, J. J. Carapella, A. Duda, J. F. Geisz, S. Kurtz, T. Moriarty, R. J. Wehrer, and B. Wernsman, Proceedings of the 31st IEEE Photovoltaic Specialists Conference, Orlando, Florida (IEEE, New York, 2005), p. 530.
5. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction