Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
2. A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
3. High power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE
4. Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure
5. Investigation of LP-MOCVD-grown GaAs-GaInP multiquantum wells by reflectance anistropy
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1. Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy;Inorganic Materials;2019-04
2. Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structures;Journal of Applied Physics;2017-01-14
3. Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies;Applied Surface Science;2016-01
4. Carrier quenching in InGaP/GaAs double heterostructures;Journal of Applied Physics;2015-08-14
5. Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods;Nanoscale Research Letters;2011-03-03
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