Author:
López-Escalante M.C.,Gabás M.,García I.,Barrigón E.,Rey-Stolle I.,Algora C.,Palanco S.,Ramos-Barrado J.R.
Funder
Spanish Ministerio de Economía y Competitividad
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference24 articles.
1. Properties of interfaces in GaInP solar cells;Gudovskikh;Semiconductors,2009
2. Band structure at heterojunction interfaces of GaInP solar cells;Gudovskikh;Solar Energy Mater. Solar Cells,2010
3. Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures;Samberg;Appl. Phys. Lett.,2013
4. Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy;Tsai;J. Cryst. Growth,1994
5. Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method;Frigeri;J. Mater. Sci.: Mater. Electron.,2008
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献