A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102717
Reference6 articles.
1. In situ characterization of MOCVD growth processes by light scattering techniques
2. Electroreflectance and photoreflectance of GaInP
3. 27.6% efficiency (1 sun, air mass 1.5) monolithic Al0.37Ga0.63As/GaAs two‐junction cascade solar cell with prismatic cover glass
4. Organometallic growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69)
5. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
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