Organometallic growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337308
Reference29 articles.
1. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
2. Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth
3. The preparation and properties of vapor-grown In1−xGax P
4. Molecular Beam Epitaxial Growth of Undoped Low-Resistivity InxGa1-xP on GaAs at High Substrate Temperatures (500–580°C)
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3. Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
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5. Si and Si/P implants in In0.5Ga0.5P and In0.5Al0.5P;Applied Physics Letters;1996-06-10
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