Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials-Reference-Cited by-同舟云学术

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Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials

Published:1999 Issue:4 Volume:17 Page:1485
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kim Andrew Y.,McCullough Wendy S.,Fitzgerald Eugene A.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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