The preparation and properties of vapor-grown In1−xGax P-Reference-Cited by-同舟云学术

The preparation and properties of vapor-grown In1−xGax P

Published:1971-03 Issue:3 Volume:2 Page:789-794
ISSN:0360-2133
Container-title:Metallurgical Transactions
language:en
Short-container-title:MT

Author:

Nuese C. J.,Richman D.,Clough R. B.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/BF02662737.pdf

Reference21 articles.

1. C. Hilsum and P. Porteous:Proc. Ninth International Conference on the Physics of Semiconductors, 1968, vol. 2, p. 1214.

2. H. Rodot, J. Horak, G. Rouy, and J. Bourneix:Compt. Rend. Paris, 1968, vol. 269B, p. 381.

3. M. R. Lorenz and A. Onton:Tenth International Conf. on the Physics of Semiconductors, Cambridge, Paper WAb-7, August 1970.

4. J. J. Tietjen and J. A. Amick:J. Electrochem. Soc., 1966, vol. 113, p. 724.

5. R. A. Smith:Semiconductors, Cambridge Press, 1961.

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