Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. The preparation and properties of vapor-grown In1−xGax P
2. Liquid phase epitaxial growth of GaxIn1−xP
3. Optically Pumped In1−xGax P Platelet Lasers from the Infrared to the Yellow (8900−5800 Å, 77°K)
4. Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)
5. Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaPxAs1-x(x=0, 0.2, 0.4) Substrates
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