Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662083
Reference25 articles.
1. BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYS
2. STIMULATED EMISSION IN In1 ‐xGaxP
3. The preparation and properties of vapor-grown In1−xGax P
4. Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase Epitaxy
5. In1−xGaxP p‐n Junction Lasers
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3. Liquid-Phase Epitaxial Growth ofIn0.35Ga0.65Pon GaP Substrates from Sn-Rich Solutions;Japanese Journal of Applied Physics;1997-09-15
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