High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides
Author:
Affiliation:
1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
2. Rose-Hulman Institute of Technology, Terre Haute, Indiana 47803, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5013136
Reference32 articles.
1. Development of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy
2. Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy
3. Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
4. Physics and technology of vapour phase epitaxial growth of GaAs—A review
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