Design of Planarizing Growth Conditions on Unpolished and Faceted (100)-Oriented GaAs Substrates Using Hydride Vapor Phase Epitaxy
Author:
Affiliation:
1. Colorado School of Mines, Golden, Colorado 80401, United States
2. National Renewable Energy Laboratory, Golden, Colorado 80401, United States
Funder
Division of Graduate Education
Solar Energy Technologies Program
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c01296
Reference28 articles.
1. Reuse of GaAs substrates for epitaxial lift-off by employing protection layers
2. Wafer reuse for repeated growth of III-V solar cells
3. Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells
4. Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies
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