Evidence of type‐II band alignment at the ordered GaInP to GaAs heterointerface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358979
Reference31 articles.
1. Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
2. Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes
3. Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors
4. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
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