Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351982
Reference14 articles.
1. Atomic ordering in InAs0.5P0.5grown by organometallic vapor phase epitaxy
2. Sublattice ordering in GaInP and AlGaInP: Effects of substrate orientations
3. Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition
4. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
5. Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy
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4. Subcell Debye behavior analysis of order–disorder effects in triple-junction InGaP-based photovoltaic solar cells;Journal of Luminescence;2015-12
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