Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition

Published:1991-08 Issue:1-2 Volume:113 Page:127-130
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Suzuki Mariko,Nishikawa Yukie,Ishikawa Masayuki,Kokubun Yoshihiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD

2. Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy

3. Zn doping characteristics for InGaAlP grown by low‐pressure metalorganic chemical vapor deposition

4. Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy

5. Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation

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