Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation

Author:

Minagawa S.,Kondow M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference13 articles.

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1. Grown-in defects and thermal instability affecting the reliability of lasers: III–Vs versus III-nitrides;Reliability of Semiconductor Lasers and Optoelectronic Devices;2021

2. MOVPE-Grown Quantum Cascade Laser Structures Studied by Kelvin Probe Force Microscopy;Crystals;2020-02-20

3. InGaP electron spectrometer for high temperature environments;Scientific Reports;2019-07-31

4. Energy response characterization of InGaP X-ray detectors;Journal of Applied Physics;2018-11-21

5. Temperature characterisation of spectroscopic InGaP X-ray photodiodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2018-11

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