Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19890512?crawler=true&mimetype=application/pdf
Reference13 articles.
Cited by 76 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. InGaP electron spectrometer for high temperature environments;Scientific Reports;2019-07-31
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