Direct observation of uniform optical properties from microphotoluminescence mapping of InGaN quantum wells grown on slightly misoriented GaN substrates-Reference-Cited by-同舟云学术

Direct observation of uniform optical properties from microphotoluminescence mapping of InGaN quantum wells grown on slightly misoriented GaN substrates

Published:2008-05 Issue:6 Volume:5 Page:2158-2160
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Tachibana Koichi,Nago Hajime,Nunoue Shin-ya

Publisher

Wiley

Subject

Condensed Matter Physics

Reference11 articles.

1. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

2. High-power and wide wavelength range GaN-based laser diodes

3. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

4. Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of 4° misoriented sapphire substrate on optical property of green InGaN/GaN multiple quantum wells;Superlattices and Microstructures;2018-01

2. Monolithic cyan − violet InGaN/GaN LED array;physica status solidi (a);2017-04-27

3. Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts;Journal of Crystal Growth;2015-08

4. Effect ofc-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN;Japanese Journal of Applied Physics;2014-04-14

5. Lateral Control of Indium Content and Wavelength of III–Nitride Diode Lasers by Means of GaN Substrate Patterning;Applied Physics Express;2012-01-26