Atomic ordering in InAs0.5P0.5grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105563
Reference14 articles.
1. Ordered structures and metastable alloys grown by OMVPE
2. Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
3. Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy
4. Long-range atomic order inGaxIn1−xAsyP1−yepitaxial layers [(x,y)=(0.47,1), (0.37,0.82), (0.34,0.71), and (0.27,0.64)]
5. Long‐range [111] ordering in GaAs1−xPx
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3. A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3μm based on ordering in InGaAsP;Physica E: Low-dimensional Systems and Nanostructures;2006-05
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