Optical investigations of GaAs‐GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106336
Reference12 articles.
1. Ga0.5In0.5P/GaAs interfaces by organometallic vapor‐phase epitaxy
2. Se‐related deep levels in InGaAlP
3. First observation of the two‐dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition
4. High‐quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low‐pressure metalorganic chemical vapor deposition
5. Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
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